Description: Fundamentals of Nanoscaled Field Effect Transistors Please note: this item is printed on demand and will take extra time before it can be dispatched to you (up to 20 working days). Author(s): Amit Chaudhry Format: Paperback Publisher: Springer-Verlag New York Inc., United States Imprint: Springer-Verlag New York Inc. ISBN-13: 9781493944828, 978-1493944828 Synopsis Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high- technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Price: 73.05 GBP
Location: Aldershot
End Time: 2025-01-29T09:09:02.000Z
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Book Title: Fundamentals of Nanoscaled Field Effect Transistors
Number of Pages: 201 Pages
Publication Name: Fundamentals of Nanoscaled Field Effect Transistors
Language: English
Publisher: Springer-Verlag New York Inc.
Item Height: 235 mm
Subject: Engineering & Technology, Physics
Publication Year: 2016
Type: Textbook
Item Weight: 3343 g
Subject Area: Material Science, Nanotechnology
Author: Amit Chaudhry
Item Width: 155 mm
Format: Paperback
