Introduction to Magnetic Random-Access Memory by Ronald B. Goldfarb-SHIPS FREE!

Description: Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. ABOUT US We are a 501(c)3 non-profit corporation. We sell books and other items donated by our community members to raise money for our local library system. We fund services, reading programs and purchases not in their budget. Unless clearly stated, our books are NOT ex-library. Our organization has operated continuously in the same city since 1937. PROCEEDS BENEFIT OUR LOCAL LIBRARY PROGRAMS - THANK YOU! Please visit our store for more titles.https://www.ebay.com/usr/friendsofthepaloaltolibrary

Price: 99 USD

Location: Palo Alto, California

End Time: 2025-01-28T00:09:07.000Z

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