Description: Nonlinear Transistor Model Parameter Extraction Techniques by Matthias Rudolph, Christian Fager, David E. Root Estimated delivery 3-12 business days Format Hardcover Condition Brand New Description Achieve accurate and reliable parameter extraction using a broad range of techniques and methods provided. Experts from industry and academia present real-world examples and insights into key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Publisher Description Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction. Author Biography Matthias Rudolph is the Ulrich-L.-Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology, Cottbus, Germany. Prior to this, he worked at the Ferdinand-Braun-Institut, Leibniz Institut fÜr Höchstfrequenztechnik (FBH), Berlin, where he was responsible for modeling of GaN HEMTs and GaAs HBTs and heading the low-noise components group. Christian Fager is an Associate Professor at Chalmers University of Technology, Sweden, where he leads a research group focusing on energy efficient transmitters and power amplifiers for future wireless applications. In 2002 he received the Best Student Paper Award at the IEEE International Microwave Symposium for his research on uncertainties in transistor small signal models. David E. Root is Agilent Research Fellow and Measurement and Modeling Sciences Architect at Agilent Technologies, Inc., where he works on nonlinear device and behavioral modeling, large-signal simulation, and nonlinear measurements for new technical capabilities and business opportunities. He is a Fellow of the IEEE and in 2007 he received the 2007 IEEE ARFTG Technology Award. Details ISBN 0521762103 ISBN-13 9780521762106 Title Nonlinear Transistor Model Parameter Extraction Techniques Author Matthias Rudolph, Christian Fager, David E. Root Format Hardcover Year 2011 Pages 366 Publisher Cambridge University Press GE_Item_ID:147012726; About Us Grand Eagle Retail is the ideal place for all your shopping needs! With fast shipping, low prices, friendly service and over 1,000,000 in stock items - you're bound to find what you want, at a price you'll love! Shipping & Delivery Times Shipping is FREE to any address in USA. Please view eBay estimated delivery times at the top of the listing. Deliveries are made by either USPS or Courier. We are unable to deliver faster than stated. International deliveries will take 1-6 weeks. NOTE: We are unable to offer combined shipping for multiple items purchased. This is because our items are shipped from different locations. Returns If you wish to return an item, please consult our Returns Policy as below: Please contact Customer Services and request "Return Authorisation" before you send your item back to us. Unauthorised returns will not be accepted. Returns must be postmarked within 4 business days of authorisation and must be in resellable condition. Returns are shipped at the customer's risk. We cannot take responsibility for items which are lost or damaged in transit. For purchases where a shipping charge was paid, there will be no refund of the original shipping charge. Additional Questions If you have any questions please feel free to Contact Us. Categories Baby Books Electronics Fashion Games Health & Beauty Home, Garden & Pets Movies Music Sports & Outdoors Toys
Price: 160.9 USD
Location: Calgary, Alberta
End Time: 2025-01-20T04:36:15.000Z
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ISBN-13: 9780521762106
Book Title: Nonlinear Transistor Model Parameter Extraction Techniques
Number of Pages: 366 Pages
Language: English
Publication Name: Nonlinear Transistor Model Parameter Extraction Techniques
Publisher: Cambridge University Press
Subject: Electrical, Microwaves
Publication Year: 2011
Item Height: 0.8 in
Item Weight: 30.8 Oz
Type: Textbook
Item Length: 10 in
Author: Christian Fager
Subject Area: Technology & Engineering
Item Width: 7 in
Series: The Cambridge RF and Microwave Engineering Ser.
Format: Hardcover